| PART |
Description |
Maker |
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| UPD4216805 UPD4216805-50 UPD4216805-60 UPD4216805- |
16M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT, HYPER PAGE MODE
|
NEC
|
| MC-4216LFG641 |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
|
NEC Corp.
|
| MC-4516CB646XF-A10 MC-4516CB646XF-A80 MC-4516CB646 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-42S8LFF64S |
3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压3.4V的DRAM模块)
|
NEC Corp.
|
| MC-4516CA727EF-A75 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MC-454AC726 |
4M-Word By 72-BIT Dynamic RAM Module(4M×72位动态RAM模块) 分词72位动态内存模块（4米72位动态内存模块）
4M-Word By 72-BIT Dynamic RAM Module(4M?72浣????AM妯″?)
|
NEC Corp.
NEC, Corp.
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M5M467805BJ M5M467805BTP-5 M5M465165BJ M5M465165BT |
From old datasheet system
EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM5216808/5216408C HM5216808CTT-80 |
1048576-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
2097152-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
x8 SDRAM x8 SDRAM内存
|
Hitachi,Ltd.
|
